| PART |
Description |
Maker |
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| CS5467-ISZ |
Four-channel Power/Energy IC
|
Cirrus Logic, Inc.
|
| IRF9230 |
Avalanche-Energy-Rated P-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
|
| PHD2N60E PHP2N60E PHB2N60E |
PowerMOS transistors Avalanche energy rated 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHP6N60E PHB6N60E |
PowerMOS transistors Avalanche energy rated 5.4 A, 600 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHW9N60E PHB9N60E |
PowerMOS transistors Avalanche energy rated
GT 10C 10#16 SKT PLUG RTANG 9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| IRF5N3415 IRF5N3415-15 |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.042ohm, Id=37.5A)
SURFACE MOUNT (SMD-1) 150V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=150V/ Rds(on)=0.042ohm/ Id=37.5A)
|
IRF[International Rectifier]
|
| EM3-DINAV93DX EM3-DINAV23CO EM3-DINAV23CR EM3-DINA |
Energy Management Energy Meter with plug-in Output Modules
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| CBC915-ACA CBC915-AIA-TR1 CBC915-ACA-TR5 CBC915-AC |
EnerChip?/a> Energy Processor for Energy Harvesting Applications
|
Cymbet Corporation
http://
|
| CBC-EVAL-09 |
EnerChip Energy Processor for Energy Harvesting Applications
|
Cymbet Corporation
|
| MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
